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papers

Publications (20)

cond-mat.str-el1999

Time-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport

V. M. Pudalov, G. Brunthaler, A. Prinz +2

cond-mat.str-el1999

Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.str-el1998

Maximum Metallic Conductivity in Si-MOS Structures

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.mes-hall2001

The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

V. M. Pudalov, M. E. Gershenson, H. Kojima +5

cond-mat.mes-hall2004

Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers

T. Hörmann, G. Brunthaler

cond-mat.str-el2002

Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.str-el2001

Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.str-el1997

Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.mes-hall1997

Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

G. Brunthaler, T. Dietl, A. Prinz +7

cond-mat.str-el2004

Reply to Comment (cond-mat/0311174)

V. M. Pudalov, M. E. Gershenson, H. Kojima +2

cond-mat.mes-hall2001

Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers

G. Brunthaler, A. Prinz, G. Bauer +1

cond-mat.str-el2001

Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.str-el2010

Dipole trap model for the metallic state in gated silicon-inversion layers

T. Hörmann, G. Brunthaler

cond-mat.str-el2002

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

V. M. Pudalov, M. E. Gershenson, H. Kojima +3

cond-mat.str-el2000

Weak-localization type description of conduction in the "anomalous" metallic state

B. L. Altshuler, G. W. Martin, D. L. Maslov +4

cond-mat.str-el1998

Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal

V. M. Pudalov, G. Brunthaler, A. Prinz +1

cond-mat.str-el2002

Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"

V. M. Pudalov, M. Gershenson, H. Kojima +5

cond-mat.str-el2001

Valley Splitting in Si-Inversion Layers at Low Magnetic Fields

V. M. Pudalov, A. Punnoose, G. Brunthaler +2

cond-mat.str-el2002

On the two-dimensional metallic state in silicon-on-insulator structures

G. Brunthaler, A. Prinz, G. Pillwein +2

cond-mat.mes-hall1999

Weak localization in the 2D metallic regime of Si-MOS

G. Brunthaler, A. Prinz, G. Bauer +5