Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
arXiv:cond-mat/0206258 · doi:10.1103/PhysRevLett.89.219702
Abstract
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
2 pages, 1 figure