Maximum Metallic Conductivity in Si-MOS Structures
arXiv:cond-mat/9812183 · doi:10.1103/PhysRevB.60.R2154
Abstract
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.
3 pages, 3 ps-figs, RevTex, new data