Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"
arXiv:cond-mat/0206279 · doi:10.1103/PhysRevLett.89.129702
Abstract
Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].
2 pages