Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers
arXiv:cond-mat/0412762
Abstract
The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions of the model are discussed carefully. In general we find a similar behavior but include further details in the calculation. The calculated strong density dependence of the resistivity is not yet in full agreement with the experiment.
5 pages, 3 figures, to be submitted