Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations
arXiv:1110.4760 · doi:10.1117/12.896839
Abstract
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.