Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks
arXiv:1105.6052 · doi:10.1117/12.889831
Abstract
Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings.
SPIE Europe Optical Metrology, Conference Proceedings