Scaling of nano-Schottky-diodes
arXiv:cond-mat/0202401 · doi:10.1063/1.1521251
Abstract
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.
4 pages, 4 figures, accepted for publication in Appl. Phys. Lett., some minor additions and corrections