Publications (53)
Gate-induced ionization of single dopant atoms
G. D. J. Smit, S. Rogge, J. Caro +1
Non-local coupling of two donor-bound electrons
J. Verduijn, R. R. Agundez, M. Blaauboer +1
Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon
M. Gasseller, R. Loo, J. F. Harrison +3
Electronic transport through electron-doped Metal-Phthalocyanine Materials
M. F. Craciun, S. Rogge, M. J. L. den Boer +4
Single domain transport measurements of C60 films
S. Rogge, M. Durkut, T. M. Klapwijk
Stark effect of shallow impurities in Si
G. D. J. Smit, S. Rogge, J. Caro +1
Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants
J. A. Mol, J. Salfi, J. A. Miwa +2
Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen +4
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
J. A. Mol, J. Salfi, R. Rahman +5
Multi-valley envelope function equations and effective potentials for P impurity in silicon
M. V. Klymenko, S. Rogge, F. Remacle
Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
M. J. Calderon, J. Verduijn, G. P. Lansbergen +3
Coherent transport through a double donor system in silicon
J. Verduijn, G. C. Tettamanzi, G. P. Lansbergen +3
Spin-orbit dynamics of single acceptor atoms in silicon
J. van der Heijden, T. Kobayashi, M. G. House +5
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
H. Sellier, G. P. Lansbergen, J. Caro +5
Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds
M. F. Craciun, S. Rogge, A. F. Morpurgo
Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics
G. D. J. Smit, S. Rogge, J. Caro +1
New tools for the direct characterisation of FinFETs
G. C. Tettamanzi, A. Paul, S. Lee +2
Formation of atom wires on vicinal silicon
C. Gonzalez, P. C. Snijders, J. Ortega +4
Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
M. Urdampilleta, A. Chatterjee, C. C. Lo +7
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
Dynamics of a single-atom electron pump
J. van der Heijden, G. C. Tettamanzi, S. Rogge
An accurate single-electron pump based on a highly tunable silicon quantum dot
A. Rossi, T. Tanttu, K. Y. Tan +7
Radio-frequency dispersive detection of donor atoms in a field-effect transistor
J. Verduijn, M. Vinet, S. Rogge
Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
Gigahertz Single-Electron Pumping Mediated by Parasitic States
A. Rossi, J. Klochan, J. Timoshenko +6
Single-shot single-gate RF spin readout in silicon
P. Pakkiam, A. V. Timofeev, M. G. House +5
Ga-induced atom wire formation and passivation of stepped Si(112)
P. C. Snijders, C. Gonzalez, S. Rogge +4
Linear and planar molecules formed by coupled P donors in silicon
M. V. Klymenko, S. Rogge, F. Remacle
Charge-insensitive single-atom spin-orbit qubit in silicon
J. Salfi, J. A. Mol, Dimitrie Culcer +1
Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state
G. D. J. Smit, S. Rogge, J. Caro +1
Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
T. Kobayashi, J. van der Heijden, M. G. House +6
Spatially resolved resonant tunneling on single atoms in silicon
B. Voisin, J. Salfi, J. Bocquel +2
Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system
R. R. Agundez, J. Verduijn, S. Rogge +1
Transport spectroscopy of a single dopant in a gated silicon nanowire
H. Sellier, G. P. Lansbergen, J. Caro +5
Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier
J. Caro, I. D. Vink, G. D. J. Smit +2
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
J. Salfi, B. Voisin, A. Tankasala +6
Spatially Resolving Valley Quantum Interference of a Donor in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
Lifetime enhanced transport in silicon due to spin and valley blockade
G. P. Lansbergen, R. Rahman, J. Verduijn +6
Scaling of nano-Schottky-diodes
G. D. J. Smit, S. Rogge, T. M. Klapwijk
Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors
R. W. I. de Boer, A. F. Stassen, M. F. Craciun +4
Donor Wavefunctions in Si Gauged by STM Images
A. L. Saraiva, J. Salfi, J. Bocquel +5
Evidence for the formation of a Mott state in potassium-intercalated pentacene
M. F. Craciun, G. Giovannetti, S. Rogge +3
Dopant metrology in advanced FinFETs
G. P. Lansbergen, R. Rahman, G. C. Tettamanzi +4
Orbital Stark effect and quantum confinement transition of donors in silicon
Rajib Rahman, G. P. Lansbergen, Seung H. Park +4
Charge Pumping Through a Single Donor Atom
G. C. Tettamanzi, R. Wacquez, S. Rogge
Balanced ternary addition using a gated silicon nanowire
J. A. Mol, J. van der Heijden, J. Verduijn +3
Tunable Kondo effect in a single donor atom
G. P. Lansbergen, G. C. Tettamanzi, J. Verduijn +4
Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
M. Usman, B. Voisin, J. Salfi +2
Evolution of the conductivity of potassium-doped pentacene films
M. F. Craciun, S. Rogge, A. F. Morpurgo
Competing periodicities in fractionally filled one-dimensional bands
P. C. Snijders, S. Rogge, H. H. Weitering
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
Enhanced tunneling across nanometer-scale metal-semiconductor interfaces
G. D. J. Smit, S. Rogge, T. M. Klapwijk