AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors
arXiv:physics/9709041 · doi:10.1016/S0168-9002(98)00007-2
Abstract
Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.
20 pages, 9 figures, to be published in NIM A