Metal-Insulator oscillations in a Two-dimensional Electron-Hole system
arXiv:cond-mat/9912122 · doi:10.1103/PhysRevLett.85.2364
Abstract
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
4 pages, 5 Postscript figures: revised version