Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
arXiv:cond-mat/9910228 · doi:10.1103/PhysRevB.61.R5082
Abstract
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.
4 pages, 3 figures