Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

Abstract

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.

4 pages (RevTeX), 3 figures (postscript) replaced by version published in special issue of Annalen d. Physik