Dephasing Effects by Ferromagnetic Boundary on Resistivity in Disordered Metallic Layer
arXiv:cond-mat/9902256 · doi:10.1143/JPSJ.69.2407
Abstract
The resistivity of disordered metallic layer sandwiched by two ferromagnetic layers at low-temperature is investigated theoretically. It is shown that the magnetic field acting at the interface does not affect the classical Boltzmann resistivity but causes a dephasing among electrons in the presence of the spin-orbit interaction, suppressing the anti-localization due to the spin-orbit interaction. The dephasing turns out to be stronger in the case where the magnetization of the two layers is parallel, contributing to a positive magnetoresistance close to a switching field at low temperature.
11 pages, 3 figures. Title modified in journal version