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Dephasing Effects by Ferromagnetic Boundary on Resistivity in Disordered Metallic Layer

arXiv:cond-mat/9902256 · doi:10.1143/JPSJ.69.2407

Abstract

The resistivity of disordered metallic layer sandwiched by two ferromagnetic layers at low-temperature is investigated theoretically. It is shown that the magnetic field acting at the interface does not affect the classical Boltzmann resistivity but causes a dephasing among electrons in the presence of the spin-orbit interaction, suppressing the anti-localization due to the spin-orbit interaction. The dephasing turns out to be stronger in the case where the magnetization of the two layers is parallel, contributing to a positive magnetoresistance close to a switching field at low temperature.

11 pages, 3 figures. Title modified in journal version