Negative differential resistance due to single-electron switching
arXiv:cond-mat/9809272 · doi:10.1063/1.123449
Abstract
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.
3 pages, 3 figures; submitted to APL