High Temperature Conductance of the Single Electron Transistor
arXiv:cond-mat/9806117 · doi:10.1103/PhysRevB.58.R10155
Abstract
The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and found to explain recent experimental data.
4 pages, 2 figures