Strong exciton binding in quantum structures through remote dielectric confinement

Abstract

We propose a new type of hybrid systems formed by conventional semiconductor nanostructures with the addition of remote insulating layers, where the electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Due to the polarization charges induced by the dielectric mismatch at the semiconductor/insulator interfaces, we show that the exciton binding energy can be more than doubled. For conventional III-V quantum wires such remote dielectric confinement allows exciton binding at room temperature.

4 pages, 3 PostScript figures embedded, best printed in color. Uses RevTex, multicol, and psfig styles. To appear in Phys. Rev. Lett