Quantum Mott transition in a silicon quantum dot
arXiv:cond-mat/9802227
Abstract
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
6 pages, 2 figures in eps