Reflection symmetry at a B=0 metal-insulator transition in two dimensions
arXiv:cond-mat/9611147 · doi:10.1103/PhysRevB.55.R13421
Abstract
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport mechanisms on the two sides are related.
The substance of the paper is unchanged but we have given a more appropriate credit to earlier work