Impact of interface roughness on perpendicular transport and domain formation in superlattices
arXiv:cond-mat/9610119 · doi:10.1006/spmi.1996.0249
Abstract
A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical characteristics exhibit several branches due to the formation of electric field domains in quantitative agreement with experimental data.
4 pages 1 figure