Electric field scaling at a B=0 metal-insulator transition in two dimensions
arXiv:cond-mat/9608101 · doi:10.1103/PhysRevLett.77.4938
Abstract
The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at B=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, ν=1.5, and the dynamical exponent, z=0.8, close to the theoretical value z=1.
We have slightly changed discussion after a conversation with B. I. Shklovskii whom we thank very much