Theory of Andreev reflection in a junction with a strongly disordered semiconductor

Abstract

We study the conduction of a {\sl N~-~Sm~-~S} junction, where {\sl Sm} is a strongly disordered semiconductor. The differential conductance $dI/dV$ of this {\sl N~-~Sm~-~S} structure is predicted to have a sharp peak at $V=0$. Unlike the case of a weakly disordered system, this feature persists even in the absence of an additional (Schottky) barrier on the boundary. The zero-bias conductance of such a junction $G_{NS}$ is smaller only by a numerical factor than the conductance in the normal state $G_N$. Implications for experiments on gated heterostructures with superconducting leads are discussed.

4 pages, 2 figures, to appear in Rapid Communication section of Phys. Rev. B