Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect
arXiv:cond-mat/0703670 · doi:10.1063/1.2740579
Abstract
We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.
3 pages, 2 figures