Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes
arXiv:cond-mat/0612638 · doi:10.1063/1.2720711
Abstract
We measured Aharonov-Bohm resistance oscillations in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition we observe resistance oscillations as a function of front gate bias at zero magnetic field. We discuss the results in light of spin interference in the ring and possible applications to spintronics.
4 pages, 3 figures; accepted in Applied Physics Letters