Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor
arXiv:cond-mat/0611704 · doi:10.1063/1.2730349
Abstract
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively.
To appear in the Proceedings of ICPS28th (Vienna, Austria, July 24-28, 2006)