Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
arXiv:cond-mat/0611269 · doi:10.1063/1.2435957
Abstract
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
4 pages, 3 figures