Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots
arXiv:cond-mat/0610479 · doi:10.1063/1.2730192
Abstract
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excitonic complexes change dramatically. The results are interpreted in terms of a change of electron and hole wavefunction shape and mutual position.
2 pages, 2 figures, Proceedings of the ICPS-28, Vienna, Austria 2006