Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport
arXiv:cond-mat/0609532 · doi:10.1063/1.2357888
Abstract
We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].
4 pages, 3 figures, Appl. Phys. Lett. (in press)