Low temperature metallic state induced by electrostatic carrier doping of SrTiO$_3$
arXiv:cond-mat/0608243 · doi:10.1063/1.2357850
Abstract
Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$Ω$ at low temperatures, with carrier mobility exceeding 1000 cm$^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior ($dR$/$dT$ $>$ 0). Our results demonstrate an insulator to metal transition in SrTiO$_3$ driven by electrostatic carrier density control.
3 pages, 4 figures