Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device
arXiv:cond-mat/0608237 · doi:10.1063/1.2387895
Abstract
We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.
3 pages, 4 figures, submitted to Appl. Phys. Lett