Non-activated transport of strongly interacting two-dimensional holes in GaAs
arXiv:cond-mat/0603053 · doi:10.1103/PhysRevB.74.201302
Abstract
We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.
5 pages, 4 figures