Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
arXiv:cond-mat/0601515 · doi:10.1103/PhysRevLett.96.096601
Abstract
Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
5 pages, 3 figures