Spatial Imaging and Mechanical Control of Spin Coherence in Strained GaAs Epilayers
arXiv:cond-mat/0511562 · doi:10.1063/1.2210794
Abstract
The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically-detected nuclear magnetic resonance spectroscopies. The bandgap, electron spin lifetime, electron g-factor, and nuclear quadrupole splitting are simultaneously imaged over millimeter scale areas of the epilayers for continuously varying values of strain. All-optical nuclear magnetic resonance techniques allow access to the strain induced nuclear quadrupolar resonance splitting in field regimes not easily addressable using conventional optically-detected nuclear magnetic resonance.
11 pages, 3 figures