Gated Spin Transport through an Individual Single Wall Carbon Nanotube
arXiv:cond-mat/0510112 · doi:10.1063/1.2164367
Abstract
Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively coupled gate, the magnetoresistance can be reproducibly modified between +10% and -15%. The results are explained in terms of wave vector matching of the spin polarized electron states at the ferromagnetic / nanotube interfaces.
14 pages, 5 figures