Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds
arXiv:cond-mat/0508346 · doi:10.1088/0953-8984/18/4/030
Abstract
We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, $Ï_{ab}$, is significantly higher than the $c$ - axis one, $Ï_c$, with $Ï_{ab}/Ï_c \approx 1.4$ for YPtIn and $\approx 4.2 - 4.7$ for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.