Spin transference and magnetoresistance amplification in a transistor
arXiv:cond-mat/0507378 · doi:10.1103/PhysRevB.73.161307
Abstract
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.
4 pages, 3 figures, revised version, changed title, new figures