Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction
arXiv:cond-mat/0505531 · doi:10.1103/PhysRevLett.96.086804
Abstract
The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nm. The local electronic modifications are correlated with the observed changes in the radial breathing and G-band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces.