Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

Abstract

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σ_{xy},σ_{xx}) point determines a complete flow line.

5 pages, 4 figures