Measurements of Composite Fermion Conductivity Dependence on Carrier Density

Abstract

We present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures. Extracting $α$ from the power law ln$(σ^{CF}_{xx}) \propto$ ln$(n_e)^α$ shows that $α\approx 1$. The measured $α \approx 1$ is placed between the predicted value 3/4 in the strong random magnetic field regime, and 3/2 in the weak random magnetic field regime. Comparisons between our results and theory are discussed.

6 pages, 7 figures. We present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures