Simulation of quantum dead-layers in ferroelectric tunnel junctions
arXiv:cond-mat/0503070 · doi:10.1209/epl/i2005-10219-7
Abstract
In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.