Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field
arXiv:cond-mat/0502523 · doi:10.1134/1.1780559
Abstract
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.
4 pages, 3 figures