Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor
arXiv:cond-mat/0410351 · doi:10.1063/1.1850331
Abstract
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.
3 pages, 4 figures