Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in
arXiv:cond-mat/0409296 · doi:10.1063/1.1799245
Abstract
We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, we found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.
4 figures; To appear in Appl. Phys. Lett