Observing the spin-Coulomb drag in spin-valve devices
arXiv:cond-mat/0408522 · doi:10.1103/PhysRevB.71.125103
Abstract
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device.
11 pages, 5 figures