Effect of an InP/In$_{0.53}$Ga$_{0.47}$As Interface on Spin-orbit Interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As Heterostructures

Abstract

We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $α$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k\cdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.

Submitted for publication; v2 to adjust Eq.6; v3 to correct the figure file name; v4, a revised version accepted for publication in Phys. Rev. B