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paper

Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

arXiv:cond-mat/0406584 · doi:10.1063/1.1875746

Abstract

We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.

13 pages, 4 figures