Resonance magneto-resistance in double barrier structure with spin-valve
arXiv:cond-mat/0401006 · doi:10.1016/j.physleta.2004.06.069
Abstract
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000% .
3 pages, 4 figures