Anisotropic Metal-Insulator Transition in Epitaxial Thin Films
arXiv:cond-mat/0311081 · doi:10.1103/PhysRevLett.92.226404
Abstract
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their elementary excitations possess coherent wave-like properties along the normal axis, and show an incoherent behavior in-plane. The development of such an anisotropic coherence is most likely related to Coulomb interaction between localized and delocalized thin film electronic states - 2D Kondo screening.
4 figures, submitted to PRL