Quantum dots based on spin properties of semiconductor heterostructures
arXiv:cond-mat/0311077 · doi:10.1103/PhysRevB.69.153308
Abstract
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.
9 pages, 3 figures. Accepted in PRB (Brief Report) (2004)