Hall effect in cobalt-doped TiO$_{2-δ}$
arXiv:cond-mat/0311041 · doi:10.1103/PhysRevB.69.073201
Abstract
We report Hall effect measurements on thin films of cobalt-doped TiO$_{2-δ}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$) yield a linear behavior in the Hall data while those having higher carrier concentrations (10$^{21}$ - 10$^{22}$) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO$_{2}$ to Ti$_[n}$O$_{2n-1}$ Magneli phase(s).